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M54HC75
RAD HARD 4 BIT D TYPE LATCH
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HIGH SPEED: tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC =2A(MAX.) at TA=25C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 75 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9203-065
DILC-16
FPC-16
ORDER CODES
PACKAGE DILC FPC FM M54HC75D M54HC75K EM M54HC75D1 M54HC75K1
DESCRIPTION The M54HC75 is an high speed CMOS 4 BIT D TYPE LATCH fabricated with silicon gate C2MOS technology.
It contains two groups of 2 bit latches controlled by an enable input (G1*2 or G3*4). These two latch groups can be used in different circuits. Each latch has Q and Q outputs (1Q - 4Q and 1Q - 4Q). The data applied to the data input is transferred to the Q and Q outputs when the enable input is taken high and the outputs will follow the data input as long as the enable input is kept high. When the enable input is taken low, the information data applied to the data input is retained at the outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION
June 2004
Rev. 1
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Figure 1: IEC Logic Symbols
Figure 2: Input And Output Equivalent Circuit
Table 1: Pin Description
PIN N 1, 14, 11, 8 2, 3, 6, 7 4 13 16, 15, 10, 9 12 5 SYMBOL 1Q to 4Q 1D to 4D G3 * 4 G1 * 2 1Q to 4Q GND VCC NAME AND FUNCTION Complementary Latch Outputs Data Inputs Latch Enable Input, latches 3 and 4 Latch Enable Input, latches 1 and 2 Latch Outputs Ground (0V) Positive Supply Voltage
Table 2: Truth Table
INPUTS D L H X G H H L OUTPUTS FUNCTION Q L H Qn Q H L Qn
LATCH
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Figure 3: Logic Diagram
Table 3: Absolute Maximum Ratings
Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 25 50 300 -65 to +150 265 Unit V V V mA mA mA mA mW C C
ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
Table 4: Recommended Operating Conditions
Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V C ns ns ns
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Table 5: DC Specifications
Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 IO=-20 A IO=-20 A IO=-20 A IO=-4.0 mA IO=-5.2 mA IO=20 A IO=20 A IO=20 A IO=4.0 mA IO=5.2 mA VI = VCC or GND VI = VCC or GND TA = 25C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 0.1 2 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 1 20 Typ. Max. Value -40 to 85C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 1 40 A A V V Max. -55 to 125C Min. 1.5 3.15 4.2 0.5 1.35 1.8 Max. V Unit
VIH
High Level Input Voltage Low Level Input Voltage High Level Output Voltage
VIL
V
VOH
Table 6: AC Electrical Characteristics (CL = 50 pF, Input tr = tf = 6ns)
Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 TA = 25C Min. Typ. 25 7 6 36 12 10 40 13 11 18 6 6 Max. 75 15 13 110 22 19 125 25 21 75 15 13 50 10 9 25 5 4 Value -40 to 85C Min. Max. 95 19 16 140 28 24 155 31 26 95 19 16 65 13 11 30 6 5 -55 to 125C Min. Max. 110 22 19 165 33 28 190 38 32 110 22 19 75 15 13 40 8 7 ns Unit
tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time (DATA - Q) tPLH tPHL Propagation Delay Time (G-Q) tW(H) Minimum Pulse Width (G) Minimum Set-up Time Minimum Hold Time
ns
ns
ns
ts
ns
th
ns
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Table 7: Capacitive Characteristics
Test Condition Symbol Parameter VCC (V) 5.0 5.0 TA = 25C Min. Typ. 5 30 Max. 10 Value -40 to 85C Min. Max. 10 -55 to 125C Min. Max. 10 pF pF Unit
CIN CPD
Input Capacitance Power Dissipation Capacitance (note 1)
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
Figure 4: Test Circuit
CL = 50pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50)
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Figure 5: Switching Characteristics Test Waveform (f=1MHz; 50% duty cycle)
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DILC-16 MECHANICAL DATA
mm. DIM. MIN. A a1 a2 B b b1 D E e e1 e2 F I K L 10.90 1.14 17.65 7.62 7.29 2.1 3.00 0.63 1.82 0.40 0.20 20.06 7.36 0.45 0.254 20.32 7.62 2.54 17.78 7.87 7.49 17.90 8.12 7.70 3.83 12.1 1.5 0.429 0.045 0.695 0.300 0.287 0.88 TYP MAX. 2.71 3.70 1.14 2.39 0.50 0.30 20.58 7.87 MIN. 0.083 0.118 0.025 0.072 0.016 0.008 0.790 0.290 0.018 0.010 0.800 0.300 0.100 0.700 0.310 0.295 0.705 0.320 0.303 0.151 0.476 0.059 0.035 TYP. MAX. 0.107 0.146 0.045 0.094 0.020 0.012 0.810 0.310 inch
0056437F
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FPC-16 MECHANICAL DATA
mm. DIM. MIN. A B C D E F G H L M N 0.38 6.0 18.75 0.33 0.38 4.31 22.0 0.43 6.75 9.76 1.49 0.102 8.76 0.127 8.89 1.27 0.43 0.48 0.015 0.237 0.738 0.013 0.015 0.170 0.867 0.017 TYP 6.91 9.94 MAX. 7.06 10.14 1.95 0.152 9.01 MIN. 0.266 0.384 0.059 0.004 0.345 0.005 0.350 0.050 0.017 0.019 TYP. 0.272 0.392 MAX. 0.278 0.399 0.077 0.006 0.355 inch
F
G
D
H
16
9
A
N
L
1
8
H
E
M
C
B
0016030E
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Table 8: Revision History
Date 01-Jun-2004 Revision 1 First Release Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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